Non-Volatile Memory with Linear Hot-Electron Injection Technique and Strain Gauge

 

Executive Summary

 

A linear hot-electron injection technique is developed that simplifies the programming procedure for a non-volatile computer memory as well as a self-powered strain gauge enabled by this technique.

 

Description of Technology

 

A linear hot-electron injection technique is provided for a non-volatile memory arrangement. The non-volatile memory is comprised of: a floating gate transistor; a capacitor with a first terminal electrically coupled to the gate node of the floating gate transistor; a current reference circuit electrically coupled to the source node of the floating gate transistor; and a feedback circuit electrically coupled between the source node of the floating gate transistor and a second terminal of the capacitor. The feedback circuit operates to adjust a voltage at the gate node of the floating gate transistor in accordance with a source-to-drain voltage across the floating gate transistor.

 

Key Benefits

  • Simplified: linear hot-electron injection simplifies the programming procedure
  • Precise: response of apparatus demonstrates precision injection with linearity greater than 13 bits.
  • Greater Range: this device has a dynamic range greater than 4V.
  • Self-powered measurements: enables self-powered measurement and recording of static-strain inside a structure

 

Applications (strain gauge)

  • Civil Engineering: building bridges, and roads
  • Mechanical Engineering: design of engines, turbines and automobiles
  • Biomedical Engineering: creating implants, artificial knee and hip replacements

 

Patent Status

 

US 9,331,265

 

Licensing Rights Available

 

Full licensing rights available

 

Inventors: Shantanu Chakrabartty

 

Tech ID: TEC2012-0029

 

Patent Information:

For Information, Contact:

Raymond DeVito
Technology Manager
Michigan State University
devitora@msu.edu
Keywords: