Non-Volatile Memory with Linear Hot-Electron Injection Technique and Strain Gauge
A linear hot-electron injection technique is developed that simplifies the programming procedure for a non-volatile computer memory as well as a self-powered strain gauge enabled by this technique.
Description of Technology
A linear hot-electron injection technique is provided for a non-volatile memory arrangement. The non-volatile memory is comprised of: a floating gate transistor; a capacitor with a first terminal electrically coupled to the gate node of the floating gate transistor; a current reference circuit electrically coupled to the source node of the floating gate transistor; and a feedback circuit electrically coupled between the source node of the floating gate transistor and a second terminal of the capacitor. The feedback circuit operates to adjust a voltage at the gate node of the floating gate transistor in accordance with a source-to-drain voltage across the floating gate transistor.
- Simplified: linear hot-electron injection simplifies the programming procedure
- Precise: response of apparatus demonstrates precision injection with linearity greater than 13 bits.
- Greater Range: this device has a dynamic range greater than 4V.
- Self-powered measurements: enables self-powered measurement and recording of static-strain inside a structure
Applications (strain gauge)
- Civil Engineering: building bridges, and roads
- Mechanical Engineering: design of engines, turbines and automobiles
- Biomedical Engineering: creating implants, artificial knee and hip replacements
Licensing Rights Available
Full licensing rights available
Inventors: Shantanu Chakrabartty
Tech ID: TEC2012-0029
For Information, Contact:
Michigan State University