Thin Film Deposition

 

VALUE PROPOSITION

The specific application of thin films dictates the required material properties such as thickness and chemical structure with many produced by deposition of a target material onto a substrate. Thin films play a critical role in the fabrication of many devices such as integrated circuits and solar cells, along with optical coatings and protective coatings. Some common methods for producing thin films include Physical Vapor Deposition and Chemical Vapor Deposition. Operating temperature plays a key role in deposition quality. By increasing the temperature during deposition of the thin films, crystallite size increases and grain boundaries decrease. Unfortunately, high temperature processes are energy intensive, expensive, and require more rigorous cleaning procedures. This increases costs, manufacturing time, and puts strain on the reliability of equipment used. Increased temperatures also restrict the type of substrates that can be used during deposition, limiting the applicability and versatility of this process. Therefore, a method of depositing thin films that minimizes costs and maximizes material quality and production efficiency is needed.

 

DESCRIPTION OF TECHNOLOGY

This technology is a method for making thin films and barrier coatings using a beam plasma source and a sputtering magnetron at low operating temperatures.  The method utilizes a beam plasma source resulting in more material deposited onto the substrate with a denser, more desirable film composition.  The beam plasma source generates a controlled ion beam, allowing precise control of direction towards the target material. This capability enhances the focus and control of the sputtering process, proving particularly advantageous for achieving specific deposition characteristics on the substrate.  By adjusting parameters of the beam plasma source such as ion energy and composition the deposition process has achieved desirable tailored properties. This includes influencing key characteristics like film thickness, composition, and structural properties. The heightened ionization and focused ion beam contribute to an increased deposition rate, enabling a more rapid deposition of the thin film and potentially improving the efficiency of the overall manufacturing process. Importantly, by achieving more precise control over ion energy, the addition of a beam plasma source eliminates the need for external heating.

 

BENEFITS

  • No external heating required
  • Less costly operation and capital investment
  • Less equipment maintenance
  • Lower required source voltage than competing approaches
  • Comparable resistivity to competing approaches

 

APPLICATIONS

  • Thin Film Deposition
  • Microelectronics
  • Semiconductor Devices
  • Solar Cells and Photovoltaics

 

IP Status

Patent Pending

LICENSING RIGHTS AVAILABLE

 

Full licensing rights available

Inventors: Qi Hua Fan, Ethan Neitzke

 

Tech ID: TEC2023-0083

 

 

 

For more information about this technology,

Contact Raymond DeVito, Ph.D. CLP at Devitora@msu.edu or +1-517-884-1658

 

 

Patent Information:

For Information, Contact:

Raymond Devito
Technology Manager
Michigan State University
devitora@msu.edu
Inventors:
Qi Hua Fan
Keywords: