Methods to Manufacture Large Area Single Crystal Diamond Substrates


Executive Summary


The innovation of manufacturing silicon-based semiconductors led to a boom in the electronics industry, allowing for computer chips to be created. While cleanrooms, improved processing, and other advancements led to even more powerful chips, they are still inherently limited to the material properties of silicon. This suite of MSU technologies seeks to improve the manufacturing process of diamond, ultimately to support diamond-based electronic components.


Description of Technology


Due to the superior properties of diamond such as conduction of heat, large electronic bandgap, and high thermal stability, diamond-based semiconductors have the potential to eclipse silicon-based devices. These various MSU-developed technologies seek to control various parameters of the diamond manufacturing process to improve wafer growth, purity, and size. These technologies include devices to allow for finer control of the temperature profile and the ability to grow multiple single-crystal diamond together. These devices and ‘recipes’ have demonstrated the capability of single-crystal-diamond growth with minimal defects.


Key Benefits

  • High purity
  • Low number of defects



  • Semiconductor wafers
  • High temperature electronic components
  • Semiconductor cooling system


Patent Status: 


Patents pending and issued.


Licensing Rights Available


Non-exclusive rights available




Dr. Timothy Grotjohn, Dr. Jes Asmussen, Shreya Nad, Amanda Charris, Ramon Diaz, Aaron Hardy


Tech ID:


TEC2014-0115, TEC2016-0151, TEC2017-0032, TEC2018-0100


Patent Information:

For Information, Contact:

Raymond Devito
Technology Manager
Michigan State University